IEEE - Institute of Electrical and Electronics Engineers, Inc. - A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance

2007 International Microwave Symposium (IMS 2007)

Author(s): H. Amasuga ; A. Inoue ; S. Goto ; T. Kunii ; Y. Yamamoto ; T. Oku ; T. Ishikawa
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2007
Conference Location: Honolulu, HI, USA
Conference Date: 3 June 2007
Page(s): 821 - 824
ISBN (CD): 1-4244-0688-9
ISBN (Paper): 1-4244-0687-0
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2007.380085
Regular:

A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave amplifiers, is presented. According to the nonlinear drain resistance model... View More

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