IEEE - Institute of Electrical and Electronics Engineers, Inc. - Degradation-Mode Analysis for Highly Reliable GaN-HEMT

2007 International Microwave Symposium (IMS 2007)

Author(s): Y. Inoue ; S. Masuda ; M. Kanamura ; T. Ohki ; K. Makiyama ; N. Okamoto ; K. Imanishi ; T. Kikkawa ; N. Hara ; H. Shigematsu ; K. Joshin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2007
Conference Location: Honolulu, HI, USA
Conference Date: 3 June 2007
Page(s): 639 - 642
ISBN (CD): 1-4244-0688-9
ISBN (Paper): 1-4244-0687-0
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2007.379982
Regular:

We analyzed the degradation mode of GaN-HEMTs. We observed the sudden degradation to make serious influence on the reliability. In this paper, we proposed a new approach to eliminate... View More

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