IEEE - Institute of Electrical and Electronics Engineers, Inc. - AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications

2007 International Microwave Symposium (IMS 2007)

Author(s): Ming-Yih Kao ; C. Lee ; R. Hajji ; P. Saunier ; Hua-Quen Tserng
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2007
Conference Location: Honolulu, HI, USA
Conference Date: 3 June 2007
Page(s): 627 - 629
ISBN (CD): 1-4244-0688-9
ISBN (Paper): 1-4244-0687-0
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2007.379979
Regular:

We would like to report on AlGaN/GaN HEMTs on SiC substrate with stat-of the-art power performance at Ka-band. Power gains of 5.6, 6.3 and 6.7 dB and peak PAE of 53, 53 and 51% were measured at 35... View More

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