IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling and Characterization of Sub-nanosecond Impulse Response of High-Voltage Heterojunction Bipolar Transistors

2007 International Microwave Symposium (IMS 2007)

Author(s): Subrata Halder ; Renfeng Jin ; James C.M. Hwang ; Jiyoun Lim ; Sanghoon Cheon
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2007
Conference Location: Honolulu, HI, USA
Conference Date: 3 June 2007
Page(s): 609 - 612
ISBN (CD): 1-4244-0688-9
ISBN (Paper): 1-4244-0687-0
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2007.379974
Regular:

Sub-nanosecond impulse response of high-voltage InGaAs/GaAs HBTs was characterized by using a time-domain sampling oscilloscope with the cable delay and loss corrected in frequency domain. A peak... View More

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