IEEE - Institute of Electrical and Electronics Engineers, Inc. - Virtual Gate Large Signal Model of GaN HFETs

2007 International Microwave Symposium (IMS 2007)

Author(s): A.M. Conway ; P.M. Asbeck
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2007
Conference Location: Honolulu, HI, USA
Conference Date: 3 June 2007
Page(s): 605 - 608
ISBN (CD): 1-4244-0688-9
ISBN (Paper): 1-4244-0687-0
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2007.379973
Regular:

This work demonstrates a compact circuit model for GaN HFETs that includes the anomalous transient effect generally referred to as knee voltage walkout. Both the quiescent bias dependence and the... View More

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