IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fundamental Bounds on Power Reduction during Data-Retention in Standby SRAM

2007 IEEE International Symposium on Circuits and Systems (ISCAS)

Author(s): A. Kumar ; H. Qin ; P. Ishwar ; J. Rabaey ; K. Ramchandran
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: New Orleans, LA, USA
Conference Date: 27 May 2007
Page(s): 1,867 - 1,870
ISBN (CD): 1-4244-0921-7
ISBN (Paper): 1-4244-0920-9
ISSN (Electronic): 2158-1525
ISSN (Paper): 0271-4302
DOI: 10.1109/ISCAS.2007.378279
Regular:

The authors study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above which it preserves... View More

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