IEEE - Institute of Electrical and Electronics Engineers, Inc. - Overview of Metal Lifted Failure Modes During Fine-Pitch Wirebonding Low K/Copper Dies with Bond Over Active (BOA) Circuitry Design

2007 Electronic Components and Technology Conference

Author(s): Chu-Chung Lee ; TuAnh Tran ; C. Miller
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Reno, NV, USA
Conference Date: 29 May 2007
Page(s): 1,775 - 1,781
ISBN (CD): 1-4244-0985-3
ISBN (Paper): 1-4244-0984-5
ISSN (Paper): 0569-5503
DOI: 10.1109/ECTC.2007.374037
Regular:

The size of IC device has been reduced resulting from the reduction of both transistor gate length and bond pad pitch. Since 180 nm node, wafer fab technology has decreased the gate length more... View More

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