IEEE - Institute of Electrical and Electronics Engineers, Inc. - A New Analytic Description of Short-Channel Effects in Fully Depleted Single Gate SOI MESFETs for Low Power VLSI Applications

2007 International Conference on Signal Processing, Communications and Networking

Author(s): N.B. Balamurugan ; K. Sankaranarayanan ; M. Suguna ; K. Balasubadra ; Kalaivani
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2007
Conference Location: Chennai, India
Conference Date: 22 February 2007
Page(s): 382 - 387
ISBN (CD): 1-4244-0997-7
ISBN (Paper): 1-4244-0996-9
DOI: 10.1109/ICSCN.2007.350767
Regular:

In this paper, the potential variation in the channel obtained from analytical solution of two-dimensional (2-D) Poisson's equation is used to calculate the drain induced barrier lowering (DIBL)... View More

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