IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling of PMOS NBTI Effect Considering Temperature Variation

2007 IEEE International Symposium on Quality of Electronic Design

Author(s): Hong Luo ; Yu Wang ; Ku He ; Rong Luo ; Huazhong Yang ; Yuan Xie
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2007
Conference Location: San Jose, CA, USA
Conference Date: 26 March 2007
Page(s): 139 - 144
ISBN (Paper): 0-7695-2795-7
ISSN (Electronic): 1948-3295
ISSN (Paper): 1948-3287
DOI: 10.1109/ISQED.2007.104
Regular:

Negative bias temperature instability (NBTI) has come to the forefront of critical reliability phenomena in advanced CMOS technology. In this paper, we propose a fast and accurate PMOS NBTI model,... View More

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