IEEE - Institute of Electrical and Electronics Engineers, Inc. - Power Gain Analysis of SiGe HBTs under Large-signal Power Matching Conditions

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Author(s): Ningyue Jiang ; Zhenqiang Ma ; Hao Jiang
Sponsor(s): IEEE Microwave Theory and Tech. Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2007
Conference Location: Long Beach, CA, USA
Conference Date: 10 January 2007
Page(s): 68 - 71
ISBN (CD): 0-7803-9765-7
ISBN (Paper): 0-7803-9764-9
DOI: 10.1109/SMIC.2007.322771
Regular:

Power gain of SiGe HBTs under large-signal power matching conditions is analytically studied. It is found that, the transducer power gain for CE (common-emitter) and CB (common-base)... View More

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