IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparative Study on SRAMs for Suppressing Both Oxide-Tunneling Leakage and Subthreshold Leakage in Sub-70-nm Leakage Dominant VLSIs

2007 20th International Conference on VLSI Design

Author(s): Duk-Hyung Lee ; Dong-Kone Kwak ; Kyeong-Sik Min
Sponsor(s): VLSI Soc. of India
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2007
Conference Location: Bangalore, India
Conference Date: 6 January 2007
Page(s): 632 - 637
ISBN (Paper): 0-7695-2762-0
ISSN (Electronic): 2380-6923
ISSN (Paper): 1063-9667
DOI: 10.1109/VLSID.2007.49
Regular:

In this paper, we compare 4 SRAM circuits. They are the conventional 'SRAM1', 'SRAM2' with power switches on VSs line, 'SRAM3' with switches on VDD line, and 'SRAM4' with switches on VDD and Vss... View More

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