IEEE - Institute of Electrical and Electronics Engineers, Inc. - A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling

2007 20th International Conference on VLSI Design

Author(s): Yogesh Singh Chauhan ; F. Krummenacher ; R. Gillon ; B. Bakeroot ; M. Declercq ; A.M. Ionescu
Sponsor(s): VLSI Soc. of India
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2007
Conference Location: Bangalore, India
Conference Date: 6 January 2007
Page(s): 177 - 182
ISBN (Paper): 0-7695-2762-0
ISSN (Paper): 1063-9667
DOI: 10.1109/VLSID.2007.15
Regular:

The lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the building block of many categories of high voltage MOSFETs e.g. LDMOS, VDMOS. Here we report a new... View More

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