IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Analytical Model for 4H-SiC Super-Junction Devices

Conference Proceedings. IPEMC 2006. CES/IEEE 5th International Power Electronics and Motion Control Conference

Author(s): L.C. Yu ; K. Sheng
Sponsor(s): China Electrotechnical Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2006
Conference Location: Shanghai, China
Conference Date: 14 August 2006
Volume: 2
Page(s): 1 - 4
ISBN (Paper): 1-4244-0448-7
DOI: 10.1109/IPEMC.2006.4778178
Regular:

In this paper, for the first time, a new and easy-to-implement analytical model is developed for the breakdown voltage and specific on-resistance of 4H-SiC super-junction devices. The model... View More

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