IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of Proton Irradiation dose on the Performance of Local Lifetime Controlled Power Diode with Proximity Gettering of Platinum

Conference Proceedings. IPEMC 2006. CES/IEEE 5th International Power Electronics and Motion Control Conference

Author(s): B.D. Han ; D.Q. Hu ; S.S. Xie ; Y.P. Jia ; B.W. Kang
Sponsor(s): China Electrotechnical Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2006
Conference Location: Shanghai, China
Conference Date: 14 August 2006
Volume: 2
Page(s): 1 - 5
ISBN (Paper): 1-4244-0448-7
DOI: 10.1109/IPEMC.2006.4778169
Regular:

Based on proximity gettering of platinum by vacancy defects which are induced by proton irradiation, local platinum doping is obtained. It is used as a local lifetime control technology in... View More

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