IEEE - Institute of Electrical and Electronics Engineers, Inc. - Turn-on Condition and Characteristics of High-power Semiconductor Switch RSD

Conference Proceedings. IPEMC 2006. CES/IEEE 5th International Power Electronics and Motion Control Conference

Author(s): Y.M. Zhou ; Y.H. Yu ; H.G. Chen ; L. Liang
Sponsor(s): China Electrotechnical Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2006
Conference Location: Shanghai, China
Conference Date: 14 August 2006
Volume: 2
Page(s): 1 - 4
ISBN (Paper): 1-4244-0448-7
DOI: 10.1109/IPEMC.2006.4778166
Regular:

RSD (reversely switched dynistor), a high-power semiconductor switch, is similar in design to thyristor with pnpn-regions. Instead of a conventional gate structure, RSD's anode consists of... View More

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