IEEE - Institute of Electrical and Electronics Engineers, Inc. - Unipolar SiC devices - latest achievements on the way to a new generation of high voltage power semiconductors

Conference Proceedings. IPEMC 2006. CES/IEEE 5th International Power Electronics and Motion Control Conference

Author(s): P. Friedrichs
Sponsor(s): China Electrotechnical Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2006
Conference Location: Shanghai, China
Conference Date: 14 August 2006
Volume: 1
Page(s): 1 - 5
ISBN (Paper): 1-4244-0448-7
DOI: 10.1109/IPEMC.2006.4777962
Regular:

Silicon carbide power devices are supposed to revolutionize certain parts of the power semiconductor business. After the successful product release of Schottky barrier diodes in 2001 and the... View More

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