IEEE - Institute of Electrical and Electronics Engineers, Inc. - Five-State Logic Using MOS-HBT-NDR Circuit by Standard SiGe BiCMOS Process

APCCAS 2006. 2006 IEEE Asia Pacific Conference on Circuits and Systems

Author(s): Kwang-Jow Gan ; Dong-Shong Liang ; Cher-Shiung Tsai ; Yaw-Hwang Chen ; Chun-Ming Wen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2006
Conference Location: Singapore, Singapore
Conference Date: 4 December 2006
Page(s): 1,476 - 1,479
ISBN (Paper): 1-4244-0387-1
DOI: 10.1109/APCCAS.2006.342501
Regular:

The MOS-HBT-NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) and heterojunction bipolar transistor (HBT) devices, but it can show the... View More

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