IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reliability Study of InGaP/GaAs HBT for 28V Operation

2006 IEEE Compound Semiconductor Integrated Circuit Symposium

Author(s): F. Hin-Fai Chau ; B. Jia-Fu Lin ; Yan Chen ; M. Kretschmar ; Chien-Ping Lee ; Nan-lei Larry Wang ; Xiaopeng Sun ; Wenlong Ma ; S. Xu ; P. Hu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2006
Conference Location: San Antonio, TX, USA
Conference Date: 12 November 2006
Page(s): 191 - 194
ISBN (CD): 1-4244-0127-5
ISBN (Paper): 1-4244-0126-7
DOI: 10.1109/CSICS.2006.319960
Regular:

This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process... View More

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