IEEE - Institute of Electrical and Electronics Engineers, Inc. - Does Multi-Trap Assisted Tunneling explain the oxide thickness dependence of the Statistics of SILC in FLASH Memory Arrays?

ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference

Author(s): E. Vianello ; F. Driussi ; D. Esseni ; L. Selmi ; M.J. van Duuren ; F. Widdershoven
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2006
Conference Location: Montreux, Switzerland
Conference Date: 19 September 2006
Page(s): 403 - 406
ISBN (Paper): 1-4244-0301-4
ISSN (Electronic): 2378-6558
ISSN (Paper): 1930-8876
DOI: 10.1109/ESSDER.2006.307723
Regular:

In this paper, we analyze the experimental SILC statistical data at low stress reported in (Driussi et al., 2005) . To this purpose we developed an analytical physical model to study the... View More

Advertisement