IEEE - Institute of Electrical and Electronics Engineers, Inc. - InGaAs/InP Single Photon Avalanche Diode Design and Characterization

ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference

Author(s): A. Tosi ; S. Cova ; F. Zappa ; M.A. Itzler ; R. Ben-Michael
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2006
Conference Location: Montreux, Switzerland
Conference Date: 19 September 2006
Page(s): 335 - 338
ISBN (Paper): 1-4244-0301-4
ISSN (Paper): 1930-8876
DOI: 10.1109/ESSDER.2006.307706
Regular:

Single-photon avalanche diodes (SPAD) for 1550 nm wavelength can have InGaAs/InP structure similar to that of avalanche photodiodes of fiber optic systems, but for optimizing the device structure... View More

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