IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electron mobility enhancement in uniaxially strained MOSFETs: Extraction of the effective mass variation

ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference

Author(s): F. Rochette ; M. Casse ; M. Mouis ; D. Blachier ; C. Leroux ; B. Guillaumot ; G. Reimbold ; F. Boulanger
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2006
Conference Location: Montreux, Switzerland
Conference Date: 19 September 2006
Page(s): 93 - 96
ISBN (Paper): 1-4244-0301-4
ISSN (Electronic): 2378-6558
ISSN (Paper): 1930-8876
DOI: 10.1109/ESSDER.2006.307646
Regular:

In this paper, we investigate electron mobility enhancement in uniaxially stressed nMOSFETs with three different channel orientations on a (001) Si substrate. We have experimentally demonstrated... View More

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