IEEE - Institute of Electrical and Electronics Engineers, Inc. - Carrier Backscattering Characteristics of Strained N-MOSFET Featuring Silicon-Carbon Source/Drain Regions

ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference

Author(s): Kah-Wee Ang ; Hock-Chun Chin ; King-Jien Chui ; Ming-Fu Li ; Ganesh Samudra ; Yee-Chia Yeo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2006
Conference Location: Montreux, Switzerland
Conference Date: 19 September 2006
Page(s): 89 - 92
ISBN (Paper): 1-4244-0301-4
ISSN (Paper): 1930-8876
DOI: 10.1109/ESSDER.2006.307645
Regular:

The physics of carrier transport in a sub-90nm strained SOI n-MOSFET with silicon-carbon (SiC) source/drain (S/D) regions is investigated for the first time. Significant improvement in carrier... View More

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