IEEE - Institute of Electrical and Electronics Engineers, Inc. - Circuit Techniques for Organic and Amorphous Semiconductor based Field Effect Transistors

ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference

Author(s): S. Sambandan ; A. Nathan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2006
Conference Location: Montreux, Switzerland
Conference Date: 19 September 2006
Page(s): 69 - 72
ISBN (Paper): 1-4244-0301-4
ISSN (Paper): 1930-8876
DOI: 10.1109/ESSDER.2006.307640
Regular:

Field effect transistors (FETs) built with non-crystalline semiconductors, such as amorphous hydrogenated silicon (a-Si:H) and organic thin film transistors (TFTs) are of immense interest in the... View More

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