IEEE - Institute of Electrical and Electronics Engineers, Inc. - The modeling of dark characteristics for long-wavelength HgCdTe photodiode

2006 6th International Conference On Numerical Simulation of Optoelectronic Devices

Author(s): Zhijue Quan ; Xiaoshuang Chen ; Wei Lu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2006
Conference Location: Nanyang Technological University, Nanyang Executive Centre, Singapore, China, Singapore
Conference Date: 11 September 2006
Page(s): 29 - 30
ISBN (Paper): 0-7803-9755-X
DOI: 10.1109/NUSOD.2006.306725
Regular:

A data-processing approach has been developed to obtain device parameters from resistance-voltage (R-V) characteristics measured on long-wavelength HgCdTe n-on-p photodiodes. A simple carrier... View More

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