IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of In-Segregation on sub bands in Ga1-x'Inx'Ny'As1-y'/GaAs quantum well for 1.3 and 1.55 $ m operation wavelengths

2006 6th International Conference On Numerical Simulation of Optoelectronic Devices

Author(s): V. Dixit ; H.F. Liu ; N. Xiang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2006
Conference Location: Nanyang Technological University, Nanyang Executive Centre, Singapore, China, Singapore
Conference Date: 11 September 2006
Page(s): 5 - 6
ISBN (Paper): 0-7803-9755-X
DOI: 10.1109/NUSOD.2006.306713
Regular:

The In-segregation in 7.5-nm Ga1-x'Inx'Ny'As1-y'/GaAs single quantum well (QW) is studied theoretically. The nominal (In, N) contents in the QW are... View More

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