IEEE - Institute of Electrical and Electronics Engineers, Inc. - 55nm CMOS Technology for Low Standby Power/Generic Applications Deploying the Combination of Gate Work Function Control by HfSiON and Stress-Induced Mobility Enhancement

2006 Symposium on VLSI Technology

Author(s): H. Nakamura ; Y. Nakahara ; N. Kimizuka ; T. Abe ; I. Yamamoto ; T. Fukase ; T. Nakayama ; K. Taniguchi ; K. Masuzaki ; K. Uejima ; T. Iwamoto ; T. Tatsumi ; K. Imai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 158 - 159
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705265
Regular:

A 55nm node low standby power/generic CMOS technology is demonstrated. The transistor deploys the combination of high-k gate dielectric film and process-induced stress technologies. It features... View More

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