IEEE - Institute of Electrical and Electronics Engineers, Inc. - Strained-Si, Relaxed-Ge or Strained-(Si)Ge for Future Nanoscale p-MOSFETs?

2006 Symposium on VLSI Technology

Author(s): T. Krishnamohan ; Donghyun Kim ; C. Jungemann ; Y. Nishi ; K.C. Saraswat
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 144 - 145
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705258
Regular:

For the first time, the tradeoffs between drive current (Ion ), intrinsic delay (tau), band-to-band tunneling (BTBT) leakage and short channel effects (SCE) have been systematically... View More

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