IEEE - Institute of Electrical and Electronics Engineers, Inc. - Silicon-on-Insulator MOSFETs with Hybrid Crystal Orientations

2006 Symposium on VLSI Technology

Author(s): M. Yang ; K. Chan ; A. Kumar ; S.-H. Lo ; J. Sleight ; L. Chang ; R. Rao ; S. Bedell ; A. Ray ; J. Ott ; J. Patel ; C. D'Emic ; J. Rubino ; Y. Zhang ; L. Shi ; S. Steen ; E. Sikorski ; J. Newbury ; R. Meyer ; B. To ; P. Kozlowski ; W. Graham ; S. Maurer ; S. Medd ; D. Canaperi ; L. Deligianni ; J. Tornello ; G. Gibson ; T. Dalton ; M. Ieong ; G. Shahidi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705252
Regular:

Novel silicon-on-insulator (SOI) structures are presented on hybrid orientation substrates (SuperHOT), i.e. with nFETs on (100) surface orientation and pFETs on (110) orientation, using... View More

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