IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dual Work Function Phase Controlled Ni-FUSI CMOS (NiSi NMOS, Ni2Si or Ni31Si12 PMOS): Manufacturability, Reliability & Process Window Improvement by Sacrificial SiGe Cap

2006 Symposium on VLSI Technology

Author(s): A. Veloso ; T. Hoffmann ; A. Lauwers ; S. Brus ; J.-F. de Marneffe ; S. Locorotondo ; C. Vrancken ; T. Kauerauf ; A. Shickova ; B. Sijmus ; H. Tigelaar ; M.A. Pawlak ; H.Y. Yu ; C. Demeurisse ; S. Kubicek ; C. Kerner ; T. Chiarella ; O. Richard ; H. Bender ; M. Niwa ; P. Absil ; M. Jurczak ; S. Biesemans ; J.A. Kittl
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 94 - 95
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705233
Regular:

This work presents the first comprehensive evaluation of the manufacturability and reliability of dual WF phase controlled Ni-FUSI/HfSiON CMOS (NMOS: NiSi; PMOS: Ni2Si and Ni31... View More

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