IEEE - Institute of Electrical and Electronics Engineers, Inc. - SONOS-Type FinFET Device Using P+ Poly-Si Gate and High-k Blocking Dielectric Integrated on Cell Array and GSL/SSL for Multi-Gigabit NAND Flash Memory

2006 Symposium on VLSI Technology

Author(s): Suk-Kang Sung ; Se-Hoon Lee ; Byung Yong Choi ; Jong Jin Lee ; Jeong-Dong Choe ; Eun Suk Cho ; Young Joon Ahn ; Donguk Choi ; Choong-Ho Lee ; Dong Hyun Kim ; Yong-Seok Lee ; Seung Beom Kim ; Donggun Park ; Byung-Il Ryu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 86 - 87
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705229
Regular:

For the multi-gigabit NAND flash memory, SONOS-type FinFET device with p+ gate and high-k blocking dielectric has been integrated both on the cell array and GSL/SSL for the first time. The... View More

Advertisement