IEEE - Institute of Electrical and Electronics Engineers, Inc. - Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm Node and Beyond

2006 Symposium on VLSI Technology

Author(s): H. Kawasaki ; K. Okano ; A. Kaneko ; A. Yagishita ; T. Izumida ; T. Kanemura ; K. Kasai ; T. Ishida ; T. Sasaki ; Y. Takeyama ; N. Aoki ; N. Ohtsuka ; K. Suguro ; K. Eguchi ; Y. Tsunashima ; S. Inaba ; K. Ishimaru ; H. Ishiuchi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 70 - 71
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705221
Regular:

Integration schemes of bulk FinFET SRAM cell with bulk planar FET peripheral circuit are studied for the first time. Two types of SRAM cells with different beta-ratio were fabricated and... View More

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