IEEE - Institute of Electrical and Electronics Engineers, Inc. - 122 Mb High Speed SRAM Cell with 25 nm Gate Length Multi-Bridge-Channel MOSFET (MBCFET) on Bulk Si Substrate

2006 Symposium on VLSI Technology

Author(s): Min Sang Kim ; Sung-Young Lee ; Eun-Jung Yoon ; Sung Min Kim ; Jim Lian ; Kwan-heum Lee ; Nam Myeon Cho ; Mong-sub Lee ; Duhyun Hwang ; Yong-Seok Lee ; Dong-Won Kim ; Donggun Park ; Byung-Il Ryu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 68 - 69
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705220
Regular:

As a part of continued multi-bridge-channel MOSFET (MBCFET) study, we have successfully fabricated 122Mb SRAM cell with 25 nm gate length CMOS MBCFET on bulk Si wafers. The 6-T MBCFET SRAM... View More

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