IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of FinFET Devices for 32nm Technologies and Beyond

2006 Symposium on VLSI Technology

Author(s): H. Shang ; L. Chang ; X. Wang ; M. Rooks ; Y. Zhang ; B. To ; K. Babich ; G. Totir ; Y. Sun ; E. Kiewra ; M. Ieong ; W. Haensch
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 54 - 55
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705213
Regular:

FinFET devices are demonstrated with multiple fins (>2) at a 120nm pitch using e-beam lithography to address some key challenges of FINFETs for 32nm node technologies and beyond. Target Vt's... View More

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