IEEE - Institute of Electrical and Electronics Engineers, Inc. - Vertex Channel Field Effect Transistor (VC-FET) Technology Featuring High Performance and Highly Manufacturable Trench Capacitor DRAM

2006 Symposium on VLSI Technology

Author(s): M. Kido ; M. Kito ; R. Katsumata ; M. Kondo ; S. Ito ; K. Matsuo ; K. Miyano ; L. Mizushima ; M. Sato ; H. Tanaka ; H. Yasutake ; Y. Nagata ; T. Hoshino ; N. Aoki ; H. Aochi ; A. Nitayama
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 36 - 37
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705204
Regular:

Vertex channel (VC) transistor is applied to both support devices and array transistor of trench capacitor DRAM for the first time. On-current of VC-FETs is much higher than that of conventional... View More

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