IEEE - Institute of Electrical and Electronics Engineers, Inc. - Newly Found Anomalous Gate Leakage Current (AGLC) for 65 nm Node and Beyond, and Its Countermeasure Using Nitrogen Implanted Poly-Si

2006 Symposium on VLSI Technology

Author(s): M. Togo ; T. Suzuki ; E. Hasegawa ; S. Koyama ; T. Fukai ; A. Sakakidani ; S. Miyake ; T. Watanabe ; I. Yamamoto ; M. Tanaka ; Y. Kawashima ; Y. Kunimune ; M. Ikeda ; K. Imai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 30 - 31
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705201
Regular:

We found a new anomalous gate leakage current (AGLC) of ultra-thin gate-SiON, which may directly impact standby leakage and yield for 65 nm node and beyond. We have identified the AGLC mechanism... View More

Advertisement