IEEE - Institute of Electrical and Electronics Engineers, Inc. - Advanced Dual Metal Gate MOSFETs with High-k Dielectric for CMOS Application

2006 Symposium on VLSI Technology

Author(s): R.F. Hsu ; Y.T. Hou ; F.Y. Yen ; V.S. Chang ; Ra. Lim ; C.L. Hung ; L.G. Yao ; J.C. Jiang ; H.J. Lin ; J.M. Chiou ; K.M. Yin ; J.J. Lee ; R.L. Hwang ; Y. Jin ; S.M. Chang ; H.J. Tao ; S.C. Chen ; M.S. Liang ; T.P. Ma
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Honolulu, HI, USA
Conference Date: 13 June 2006
Page Count: 2
Page(s): 11 - 12
ISBN (Paper): 1-4244-0005-8
DOI: 10.1109/VLSIT.2006.1705192
Regular:

This paper reports the fabrication of MOSFETs with dual metal gate electrodes. Low threshold voltage (Vt) was achieved using TaC for nFETs and MoNx for pFETs. The transistors show excellent... View More

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