IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 25Gb/s CDR in 90nm CMOS for High-Density Interconnects

2006 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

Author(s): C. Kromer ; G. Sialm ; C. Menolfi ; M. Schmatz ; F. Ellinger ; H. Jackel
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: San Francisco, CA, USA
Conference Date: 6 February 2006
Page Count: 10
Page(s): 1,266 - 1,275
ISBN (Paper): 1-4244-0079-1
ISSN (Paper): 0193-6530
DOI: 10.1109/ISSCC.2006.1696174
Regular:

A CDR for source-synchronous high-density link applications receives 25Gb/s at a BER of <10-12. The CDR is a first-order bang-bang topology employing a phase interpolator, linear... View More

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