IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Manufacturable True E-Mode MHEMT with High Static and Dynamic Performances

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings

Author(s): H. Maher ; P. Baudet ; I. El Makoudi ; M.-G. Perichaud ; J. Bellaiche ; M. Renvoise ; U. Rouchy ; P. Frijlink
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Princeton, NJ, USA
Conference Date: 8 May 2006
Page Count: 3
Page(s): 185 - 187
ISBN (Paper): 0-7803-9558-1
DOI: 10.1109/ICIPRM.2006.1634144
Regular:

A high DC and RF performance, fully passivated, true enhancement-mode 100 nm MHEMT is demonstrated. This transistor is a good candidate for high performance low noise and low power consumption... View More

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