IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-Current-Gain InAlP/AlGaAsSb/InP HBTs with a Compositionally-Graded AlGaAsSb Base Grown by MOCVD

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings

Author(s): Y. Oda ; K. Kurishima ; N. Watanabe ; M. Uchida ; T. Kobayashi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Princeton, NJ, USA
Conference Date: 8 May 2006
Page Count: 4
Page(s): 92 - 95
ISBN (Paper): 0-7803-9558-1
DOI: 10.1109/ICIPRM.2006.1634119
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