IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of gate resistance on RF performance of fully depleted SOI MOSFET

2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Author(s): C.L. Chen ; P.W. Wyatt ; C.K. Chen ; J.M. Knecht ; D.-R. Yost
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: San Diego, CA, USA
Conference Date: 18 January 2006
Page Count: 4
ISBN (Paper): 0-7803-9472-0
DOI: 10.1109/SMIC.2005.1587982
Regular:

We demonstrate that a metal T-gate can significantly lower the gate resistance and improve the RF performance in fully depleted SOI (FDSOI) MOSFETs. FETs with various combinations of number of... View More

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