IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-performance SiGe power HBTs with wide emitter stripes

2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Author(s): Guogong Wang ; Hao-Chih Yuan ; Zhenqiang Ma
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: San Diego, CA, USA
Conference Date: 18 January 2006
ISBN (Paper): 0-7803-9472-0
DOI: 10.1109/SMIC.2005.1587981
Regular:

Common-emitter and common-base SiGe power heterojunction bipolar transistors (PHBTs) with 2mum and 3mum emitter stripe widths have been fabricated and compared. The reduced base pinch resistance... View More

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