IEEE - Institute of Electrical and Electronics Engineers, Inc. - Emitter geometry scaling of RF noise in SiGe HBTs

2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Author(s): K. Xia ; G. Niu ; D. Sheridan ; S. Sweeney
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: San Diego, CA, USA
Conference Date: 18 January 2006
Page Count: 4
ISBN (Paper): 0-7803-9472-0
DOI: 10.1109/SMIC.2005.1587889
Regular:

This paper investigates the emitter geometry scaling of RF noise in SiGe HBTs based on noise measurements. The extracted intrinsic noise using noise de-embedding method is found to scale ideally... View More

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