IEEE - Institute of Electrical and Electronics Engineers, Inc. - Base region optimization of SiGe HBTs for high-frequency microwave power amplification

2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Author(s): Zhenqiang Ma ; Ningyue Jiang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: San Diego, CA, USA
Conference Date: 18 January 2006
Page Count: 4
ISBN (Paper): 0-7803-9472-0
DOI: 10.1109/SMIC.2005.1587888
Regular:

The base region optimization of SiGe power HBTs for high frequency power amplification is investigated. Employing a heavily doped base in conjunction with a high Ge content can effectively improve... View More

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