IEEE - Institute of Electrical and Electronics Engineers, Inc. - Double-gate SOI devices for low-power and high-performance applications

Proceedings. 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems and Design

Author(s): K. Roy ; H. Mahmoodi ; S. Mukhopadhyay ; H. Ananthan ; A. Bansal ; T. Cakici
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Hyderabad, India, India
Conference Date: 3 January 2006
ISBN (Paper): 0-7695-2502-4
ISSN (Paper): 1063-9667
DOI: 10.1109/VLSID.2006.74
Regular:

Double-gate (DG) transistors have emerged as promising devices for nano-scale circuits due to their better scalability compared to bulk CMOS. Among the various types of DG devices, quasi-planar... View More

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