IEEE - Institute of Electrical and Electronics Engineers, Inc. - Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology

2005 IEEE International Solid-State Circuits Conference

Author(s): V. Suntharalingam ; R. Berger ; J.A. Burns ; C.K. Chen ; C.L. Keast ; J.M. Knecht ; R.D. Lambert ; K.L. Newcomb ; D.M. O'Mara ; D.D. Rathman ; D.C. Shaver ; A.M. Soares ; C.N. Stevenson ; B.M. Tyrrell ; K. Warner ; B.D. Wheeler ; D.-R.W. Yost ; D.J. Young
Sponsor(s): IEEE Solid-State Circuits Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: San Francisco, CA, USA
Conference Date: 10 February 2005
Page Count: 2
ISBN (Paper): 0-7803-8904-2
ISSN (Paper): 0193-6530
DOI: 10.1109/ISSCC.2005.1494016
Regular:

A 1024/spl times/1024 integrated image sensor with 8 /spl mu/m pixels, is developed with 3D fabrication in 150 mm wafer technology. Each pixel contains a 2 /spl mu/m/spl times/2 /spl mu/m/spl... View More

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