IEEE - Institute of Electrical and Electronics Engineers, Inc. - A single-chip Si-LDMOS power amplifier for GSM

2005 IEEE International Solid-State Circuits Conference

Author(s): T. Shimizu ; Y. Matsunaga ; S. Sakurai ; I. Yoshida ; M. Hotta
Sponsor(s): IEEE Solid-State Circuits Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: San Francisco, CA, USA
Conference Date: 10 February 2005
Page Count: 3
ISBN (Paper): 0-7803-8904-2
ISSN (Paper): 0193-6530
DOI: 10.1109/ISSCC.2005.1493993
Regular:

A 0.23 /spl mu/m single-chip Si-LDMOS high-power amplifier with matching circuits and all control blocks for quad-band GSM handset phones is implemented in 2.1/spl times/2.45 mm/sup 2/. The IC... View More

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