IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 90 nm 512 Mb 166 MHz multilevel cell flash memory with 1.5 MByte/s programming

2005 IEEE International Solid-State Circuits Conference

Author(s): M. Taub ; R. Bains ; G. Barkley ; H. Castro ; G. Christensen ; S. Eilert ; R. Fackenthal ; H. Giduturi ; M. Goldman ; C. Haid ; R. Haque ; K. Parat ; S. Peterson ; A. Proescholdt ; K. Ramamurthi ; P. Ruby ; B. Sivakumar ; A. Smidt ; B. Srinivasan ; M. Szwarc ; K. Tedrow ; D. Young
Sponsor(s): IEEE Solid-State Circuits Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: San Francisco, CA, USA
Conference Date: 10 February 2005
Page Count: 3
ISBN (Paper): 0-7803-8904-2
ISSN (Paper): 0193-6530
DOI: 10.1109/ISSCC.2005.1493865
Regular:

A 2b/cell flash memory in 90 nm triple-well CMOS technology achieves 1.5 MB/s programming and 166 MHz synchronous operation. The design features 2-row programming, optimized program control... View More

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