IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of intermetallic bonding on blocking electromigration induced interfacial diffusion in Cu dual damascene interconnects

2005. 10th International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces

Author(s): Minyu Yan ; Jong-ook Suh ; King Ning Tu ; A.V. Vairagar ; S.G. Mhaisalkar ; A. Krishnamoorthy
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Irvine, CA, USA, USA
Conference Date: 16 March 2005
Page Count: 3
Page(s): 153 - 155
ISBN (Paper): 0-7803-9085-7
ISBN (Online): 0-7803-9086-5
ISSN (Paper): 1550-5723
DOI: 10.1109/ISAPM.2005.1432067
Regular:

In submicron dual damascene Cu interconnects, electromigration occurs mainly along Cu/SiN cap interface by void migration mechanism. In this study, immersion Sn surface treatment was employed... View More

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