IEEE - Institute of Electrical and Electronics Engineers, Inc. - A multi-level DRAM with fast read and low power consumption

2005 IEEE Workshop on Microelectronics and Electron Devices

Author(s): Bo Liu ; J.F. Frenzel ; R.B. Wells
Sponsor(s): IEEE Electron Devices Soc. - Boise Chapter
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Boise, ID, USA
Conference Date: 15 April 2005
Page Count: 4
Page(s): 59 - 62
ISBN (Paper): 0-7803-9072-5
DOI: 10.1109/WMED.2005.1431619
Regular:

In this paper, we present a new, multi-level DRAM design, which can store 3 voltage levels (0, Vcc, and Vcc/2) in a single memory cell. This multi-level DRAM requires no special reference voltage... View More

Advertisement