IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel buried lightly doped drain CMOS design for optimizing hot carrier versus device performance

2005 IEEE Workshop on Microelectronics and Electron Devices

Author(s): M. Thomason ; M. Nelson ; B. Greenwood ; Jagdish Prasad ; S. Steidley
Sponsor(s): IEEE Electron Devices Soc. - Boise Chapter
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Boise, ID, USA
Conference Date: 15 April 2005
Page Count: 3
Page(s): 42 - 44
ISBN (Paper): 0-7803-9072-5
DOI: 10.1109/WMED.2005.1431613
Regular:

A novel and unique buried lightly doped drain (BLDD) design for nMOSFET technology is demonstrated in this paper. This design significantly reduces the maximum electric field at the drain edge... View More

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